Novel ESD Protection Structure with Embedded SCR LDMOS for Smart Power Technology
نویسنده
چکیده
In this paper, a new robust ESD protection structure has been proposed for smart power technology. By inserting a P+ diffusion into the drain region of 40VLDMOS power transistor, the embedded SCR (ESCRLDMOS) device can be built and without changing any DC I-V characteristics of a 40V-LDMOS power transistor. It is also found that the method with P+ strap inserted into drain region (N+ in NW) can improve the ESD failure threshold from 1kV to 6kV for HBM and from 100V to 350V for MM.
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